Phase Change Memory : From Devices to Systems / by Naveen Muralimanohar, Moinuddin K. Qureshi, Sudhanva Gurumurthi, Bipin Rajendran
By: Muralimanohar, Naveen, autor
Contributor(s): Qureshi, Moinuddin Khalil Ahmed,, autor | Gurumurthi, Sudhanva, autor | Rajendran, Bipin, autor
Material type: 
E-bookSeries: (Synthesis Lectures on Computer Architecture, 1935-3243).Publisher: Cham : Springer International Publishing, 2012Edition: 1st edition 2012.Description: 1 recurso en línea (XIV, 122 páginas).ISBN: 9783031017353.Subject: Dispositivos de almacenamiento de datos | Gestión de memoria | Memorias de semiconductoresOnline resources: Acceso a este recurso digital (usuarios Universidad Europea de Madrid)
| Item type | Current library | Collection | Call number | Status | Date due | Barcode | Item holds | |
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Madrid Digital Acceso Electrónico (UEM) | Ciencias e Ingeniería | TK7895.M4 2012 EB (Browse shelf(Opens below)) | Acceso electrónico | eBook.01112410 |
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| TK7895.G36 W353 2018 EB Design of FPGA-Based Computing Systems with OpenCL | TK7895.M4 2009 EB The Memory System : You Can't Avoid It, You Can't Ignore It, You Can't Fake It | TK7895.M4 2011 EB Multi-Core Cache Hierarchies | TK7895.M4 2012 EB Phase Change Memory : From Devices to Systems | TK7895.M4 2016 EB Resistive Random Access Memory (RRAM) | TK7895 .M4 2019 EB Sensing of Non-Volatile Memory Demystified | TK7895.M4 2019 EB Multi-run Memory Tests for Pattern Sensitive Faults |
Next Generation Memory Technologies -- Architecting PCM for Main Memories -- Tolerating Slow Writes in PCM -- Wear Leveling for Durability -- Wear Leveling Under Adversarial Settings -- Error Resilience in Phase Change Memories -- Storage and System Design With Emerging Non-Volatile Memories.
As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories.
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