Phase Change Memory : From Devices to Systems
Muralimanohar, Naveen
Phase Change Memory : From Devices to Systems by Naveen Muralimanohar, Moinuddin K. Qureshi, Sudhanva Gurumurthi, Bipin Rajendran - 1st edition 2012 - 1 recurso en línea (XIV, 122 páginas) - Synthesis Lectures on Computer Architecture 1935-3243 .
Next Generation Memory Technologies -- Architecting PCM for Main Memories -- Tolerating Slow Writes in PCM -- Wear Leveling for Durability -- Wear Leveling Under Adversarial Settings -- Error Resilience in Phase Change Memories -- Storage and System Design With Emerging Non-Volatile Memories.
As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories.
9783031017353
10.1007/978-3-031-01735-3 doi
Dispositivos de almacenamiento de datos
Gestión de memoria
Memorias de semiconductores
TK7895.M4 / 2012 EB
Phase Change Memory : From Devices to Systems by Naveen Muralimanohar, Moinuddin K. Qureshi, Sudhanva Gurumurthi, Bipin Rajendran - 1st edition 2012 - 1 recurso en línea (XIV, 122 páginas) - Synthesis Lectures on Computer Architecture 1935-3243 .
Next Generation Memory Technologies -- Architecting PCM for Main Memories -- Tolerating Slow Writes in PCM -- Wear Leveling for Durability -- Wear Leveling Under Adversarial Settings -- Error Resilience in Phase Change Memories -- Storage and System Design With Emerging Non-Volatile Memories.
As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories.
9783031017353
10.1007/978-3-031-01735-3 doi
Dispositivos de almacenamiento de datos
Gestión de memoria
Memorias de semiconductores
TK7895.M4 / 2012 EB