Review of Research on Scaled Device Architectures and Importance of Lower Substrate Temperature Operation of n-MOSFETs -- Review of Research on Scaled Device Architectures and Importance of Lower Substrate Temperature Operation of n-MOSFETs -- Step-by-Step Computation of Threshold Voltage as a Function of Substrate Temperatures -- Step-by-Step Computation of Threshold Voltage as a Function of Substrate Temperatures -- Simulation Outcomes For Profile of Threshold Voltage As a Function of Substrate Temperature Based on Key Device-Centric Parameters -- Simulation Outcomes For Profile of Threshold Voltage As a Function of Substrate Temperature Based on Key Device-Centric Parameters -- Scaling Projection of Long Channel Threshold Voltage Variability with Substrate Temperatures to Scaled Node -- Scaling Projection of Long Channel Threshold Voltage Variability with Substrate Temperatures to Scaled Node -- Advantage of Lower Substrate Temperature MOSFET Operation to Minimize Short Channel Effects and Enhance Reliability -- Advantage of Lower Substrate Temperature MOSFET Operation to Minimize Short Channel Effects and Enhance Reliability -- A Prospective Outlook on Implementation Methodology of Regulating Substrate Temperatures on Silicon Die -- A Prospective Outlook on Implementation Methodology of Regulating Substrate Temperatures on Silicon Die -- Summary of Research Results -- Conclusion -- References -- Authors' Biographies.

In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (.