Multi-run Memory Tests for Pattern Sensitive Faults / Ireneusz Mrozek.
By: Mrozek, Ireneusz, autor
Contributor(s): SpringerLink (Online service)
Material type:
E-bookSeries: (Engineering (Springer-11647)).Publisher: Cham : Springer International Publishing : Imprint: Springer, 2019Description: 1 recurso en línea (X, 135 páginas) : 34 ilustraciones.ISBN: 9783319912042.Subject: Dispositivos de almacenamiento de datos
| Item type | Current library | Collection | Call number | Status | Date due | Barcode | Item holds | |
|---|---|---|---|---|---|---|---|---|
LIBRO-E NO PRÉSTAMO
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Madrid Digital Acceso Electrónico (UEM) | Ciencias e Ingeniería | TK7895.M4 2019 EB (Browse shelf(Opens below)) | Acceso electrónico | eBooks24062923 |
Browsing Madrid Digital shelves, Shelving location: Acceso Electrónico (UEM) Close shelf browser (Hides shelf browser)
| TK7895.M4 2012 EB Phase Change Memory : From Devices to Systems | TK7895.M4 2016 EB Resistive Random Access Memory (RRAM) | TK7895 .M4 2019 EB Sensing of Non-Volatile Memory Demystified | TK7895.M4 2019 EB Multi-run Memory Tests for Pattern Sensitive Faults | TK7895.M4 2019 EB Non-Volatile Memory Database Management Systems | TK7895.M4 2020 EB Applications of Emerging Memory Technology : Beyond Storage | TK7895 .M4 2020 EB Index Generation Functions |
Introduction to digital memory -- Basics of functional RAM testing -- Multi-cell faults -- Controlled random testing -- Multi-run tests based on background changing -- Multi-run tests based on address changing -- Multiple controlled random testing -- Pseudo exhaustive testing based on march tests -- Conclusion.
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations. Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process; Presents practical algorithms for design and implementation of efficient multi-run tests; Demonstrates methods verified by analytical and experimental investigations.
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