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Multi-run Memory Tests for Pattern Sensitive Faults / Ireneusz Mrozek.

By: Mrozek, Ireneusz, autor
Contributor(s): SpringerLink (Online service)
Material type: materialTypeLabelE-bookSeries: (Engineering (Springer-11647)).Publisher: Cham : Springer International Publishing : Imprint: Springer, 2019Description: 1 recurso en línea (X, 135 páginas) : 34 ilustraciones.ISBN: 9783319912042.Subject: Dispositivos de almacenamiento de datosOnline resources: Acceso a este recurso digital (usuarios Universidad Europea de Madrid)Digital Resources
Contents:
Introduction to digital memory -- Basics of functional RAM testing -- Multi-cell faults -- Controlled random testing -- Multi-run tests based on background changing -- Multi-run tests based on address changing -- Multiple controlled random testing -- Pseudo exhaustive testing based on march tests -- Conclusion.
Abstract: This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations. Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process; Presents practical algorithms for design and implementation of efficient multi-run tests; Demonstrates methods verified by analytical and experimental investigations.
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Holdings
Item type Current library Collection Call number Status Date due Barcode Item holds
LIBRO-E NO PRÉSTAMO LIBRO-E NO PRÉSTAMO Madrid Digital Acceso Electrónico (UEM) Ciencias e Ingeniería TK7895.M4 2019 EB (Browse shelf(Opens below)) Acceso electrónico eBooks24062923
Total holds: 0

Introduction to digital memory -- Basics of functional RAM testing -- Multi-cell faults -- Controlled random testing -- Multi-run tests based on background changing -- Multi-run tests based on address changing -- Multiple controlled random testing -- Pseudo exhaustive testing based on march tests -- Conclusion.

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations. Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process; Presents practical algorithms for design and implementation of efficient multi-run tests; Demonstrates methods verified by analytical and experimental investigations.

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