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006			m o d
007			cr nn||||mamaa
008			160908s2017 gw a ob 000 0 eng d
020			_a3319431994
020			_a9783319431994
020			_z3319431978
020			_z9783319431970
040			_aUPM _cUPM _dOCLCO _dIDEBK _dCOO _dOCLCF _dZ5A _dYDX _dN$T _dEBLCP _dGW5XE _dAZU _dUAB _dIOG _dESU _dJBG _dIAD _dICW _dICN _dOCLCQ _dVT2 _dES-MaUEC _bspa
050		4	_aTK7881.15 _b2017 EB
245	0	0	_aPower GaN Devices : _bMaterials, Applications and Reliability _cedited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni.
264		1	_aCham _bSpringer International Publishing : _bImprint _bSpringer _c2017.
300			_a1 recurso en línea (x, 380 páginas 306) _bilustraciones (algunas a color)
336			_aTexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	0		_aPower Electronics and Power Systems _x2196-3185
500			_aSpringerLink _bSpringer Engineering eBooks 2017 English+International
504			_aIncluye referencias bibliográficas
505	0		_a1 Properties and advantages of gallium nitride; Daisuke Ueda -- 2 Substrate issues and epitaxial growth; Stacia Keller -- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon -- 4 Lateral GaN-based power devices; Umesh Mishra -- 5 GaN-based vertical transistors; Srabanti Chowduri -- 6 GaN-based nanowire transistors; Tomas Palacios -- 7 Deep level characterization: electrical and optical methods; Robert Kaplar -- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi -- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni -- 10 Cascode configuration for normally-off devices; Primit Parikh -- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda -- 12 Fluorine implanted E-mode transistors; Kevin Chen -- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl -- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee -- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
520	3		_aThis book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
650		7	_aElectrónica de potencia _2embne _0(OCoLC)fst00937295 _0 _9150467
700	1		_aMeneghesso, Gaudenzio, _eeditor literario
700	1		_aMeneghini, Matteo, _eeditor literario
700	1		_aZanoni, Enrico, _eeditor literario
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=http://link.springer.com/10.1007/978-3-319-43199-4 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
988			_aEBOOK, asignarmaterias, EBSPRINGER_2017C
998			_b02/2018 _dz _e- _zSI
999			_c95519 _d95519 _x1