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020 _a3319499610
020 _a3319499629
_q(electronic bk.)
020 _a9783319499611
020 _a9783319499628
_q(electronic bk.)
020 _z9783319499611
_q(print)
035 _a(OCoLC)967656027
_z(OCoLC)967683523
_z(OCoLC)974650747
_z(OCoLC)1005821834
_z(OCoLC)1011983386
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050 4 _aTA1570
_b.M374 2017 EB
066 _cZsym
100 1 _aMargarit, Josep Maria,
_eautor
245 1 0 _aLow-power CMOS digital pixel imagers for high-speed uncooled PbSe IR applications
_cJosep Maria Margarit.
264 1 _aCham, Switzerland
_bSpringer
_c2017
300 _a1 recurso en línea
336 _aTexto
_btxt
_2rdacontent
337 _aelectrónico
_bc
_2rdamedia
338 _arecurso electrónico
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 0 _aSpringer theses
500 _a"Doctoral thesis accepted by Universitat Politècnica de Cataluyna (UPC), Barcelona, Spain."
500 _aSpringerLink
_bSpringer Engineering eBooks 2017 English+International
504 _aIncluye referencias bibliográficas
505 0 _aIntroduction -- Frame-Based Smart IR Imagers -- Frame-Free Compact-Pitch IR Imagers -- Pixel Test Chips in 0.35mm and 0.15mm CMOS Technologies -- Imager Test Chips in 2.5mm, 0.35mm and 0.15mm CMOS Technologies -- Conclusions.
520 3 _aThis book describes the development of a new low-cost medium wavelength IR (MWIR) monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapor phase deposition (VPD) PbSe-based MWIR detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. In order to fulfill the operational requirements of VPD PbSe, this work proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation.
650 7 _aTermografía médica
_2embne
_0(OCoLC)fst00973233
_0
_9667011
856 4 0 _uhttps://go.openathens.net/redirector/universidadeuropea.es?url=http://link.springer.com/10.1007/978-3-319-49962-8
_zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
880 _6500-00
_a"Doctoral thesis accepted by Universitat Polite�cnica de Cataluyna (UPC), Barcelona, Spain."
988 _aEBOOK, asignarmaterias, EBSPRINGER_2017B
998 _b02/2018
_dz
_e-
_zSI
999 _c95138
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