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007			cr cnu|||unuuu
008			160812t20162017sz ob 001 0 eng d
020			_a3319393618 _q(electronic bk.)
020			_a9783319393612 _q(electronic bk.)
020			_z9783319393599 _q(print)
035			_a(OCoLC)956539420 _z(OCoLC)960711599
040			_aN$T _cN$T _dGW5XE _dIDEBK _dOCLCQ _dEBLCP _dOCLCF _dN$T _dYDX _dDEBBG _dIDB _dUAB _dIOG _dMERER _dESU _dZ5A _dOCLCQ _dJBG _dIAD _dICW _dICN _dOTZ _dOCLCQ _dU3W _dES-MaUEC _bspa
050		4	_aT174.7 _bC859 2016 EB
100	1		_aCui, Zheng, _d1954- _eautor
245	1	0	_aNanofabrication : _bprinciples, capabilities and limits _cZheng Cui.
250			_aSecond edition.
264		1	_aSwitzerland _bSpringer _c[2016]
264		4	_c2017
300			_a1 recurso en línea
336			_aTexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
500			_aSpringerLink _bSpringer Engineering eBooks 2017 English+International
504			_aIncluye referencias bibliográficas e índice
505	0		_aPreface; Preface to the First Edition; Contents; Chapter 1: Introduction; 1.1 What Is Nanofabrication; 1.2 Classification of€Nanofabrication; 1.3 Purpose of€the€Book; Chapter 2: Nanofabrication by Photons; 2.1 Introduction; 2.2 Principle of€Optical Projection Lithography; 2.3 Basics of€Photoresists; 2.3.1 Process of€Optical Lithography; 2.3.2 Characteristics of€Photoresists; 2.4 Optical Lithography at Shorter Wavelengths; 2.4.1 Deep UV; 2.4.2 Extreme UV; 2.4.2.1 EUV Source; 2.4.2.2 EUV Optics; 2.4.2.3 EUV Mask; 2.4.2.4 EUV Resists; 2.4.3 X-Ray; 2.5 Optical Lithography at High NA.
505	8		_a2.6 Optical Lithography at Low k1 Factor2.6.1 Off-Axis Illumination (OAI); 2.6.2 Phase-Shifting Mask (PSM); 2.6.3 Optical Proximity Correction (OPC); 2.6.4 Photoresists; 2.6.4.1 Sensitivity; 2.6.4.2 Contrast; 2.6.4.3 Line Edge Roughness (LER); 2.6.4.4 Etch Resistance; 2.6.5 Design for€Manufacturing (DFM); 2.6.6 Double Processing; 2.7 Near-Field Optical Lithography; 2.8 Talbot Optical Lithography; 2.9 Interferometric Optical Lithography; 2.10 Maskless Optical Lithography; 2.11 Two-Photon Polymerization Lithography; References; Chapter 3: Nanofabrication by Electron Beam; 3.1 Introduction.
505	8		_a3.2 Principle of€Electron Optics3.2.1 Electron Lens; 3.2.2 Electron Source; 3.2.3 Aberrations; 3.3 Electron Beam Lithography Systems; 3.3.1 Basic Configuration; 3.3.2 Key Specifications; 3.3.3 Vector and€Raster Scanning; 3.3.4 Pattern Fragmentation; 3.3.5 Commercial e-Beam Lithography Systems; 3.4 Scattering and€Proximity Effect; 3.4.1 Electron Scattering; 3.4.2 Proximity Effect and€Correction; 3.4.3 Effect of€Secondary Electrons; 3.4.4 Low Energy e-Beam Lithography; 3.5 Resist Materials and€Processes; 3.5.1 Sensitivity of€Resist Materials; 3.5.2 Contrast of€Resist Materials.
505	8		_a3.5.3 Resolution Enhancement Processes3.6 Conditions for€High Resolution e-Beam Lithography; 3.7 High-Throughput e-Beam Lithography; 3.7.1 Shaped Beam Lithography; 3.7.2 Mask Projection Lithography; 3.7.3 Multi e-Beam Lithography; References; Chapter 4: Nanofabrication by Ion Beam; 4.1 Introduction; 4.2 Liquid Metal Ion Sources; 4.3 Focused Ion Beam Systems; 4.4 Ion Scattering in€Solid Materials; 4.5 FIB Direct Nanofabrication; 4.5.1 Ion Sputtering; 4.5.2 Ion Beam Assisted Deposition; 4.5.3 Applications; 4.5.3.1 Inspecting and€Editing Integrated Circuits.
505	8		_a4.5.3.2 Repairing Defects of€Optical Masks4.5.3.3 Preparing TEM Samples; 4.5.3.4 Nanostructuring for€Scientific Research; 4.6 Focused Ion Beam Lithography; 4.7 Ion Projection Lithography; References; Chapter 5: Nanofabrication by Scanning Probes; 5.1 Introduction; 5.2 Principles of€Scanning Probe Microscopes; 5.3 Exposure of€Resists; 5.3.1 Field Electron Emission; 5.3.2 Exposure of€Resist by STM; 5.3.3 Exposure of€Resist by NSOM; 5.4 Local Oxidation Lithography; 5.5 Additive Nanofabrication; 5.5.1 Field Induced Deposition; 5.5.2 Dip-Pen Nanolithography; 5.6 Subtractive Nanofabrication.
650		7	_aNanotecnología _2embne _0(OCoLC)fst01894718 _0 _9158453
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=http://link.springer.com/10.1007/978-3-319-39361-2 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
988			_aEBOOK, asignarmaterias, EBSPRINGER_2017A
998			_b02/2018 _dz _e- _zSI
999			_c94495 _d94495 _x1