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007			cr nn 008mamaa
008			160406s2016 si | s |||| 0|eng d
020			_a9789811008009
040			_aES-MaUEC
050		4	_aTK5981 _b.K387 2016 EB
082	0	4	_a620.5
100	1		_aKaushik, B. K. _0Local _9100865
245	1	0	_aCrosstalk in Modern On-Chip Interconnects : _bA FDTD Approach _cby BK Kaushik, V Ramesh Kumar, Amalendu Patnaik
260			_aSingapore _bSpringer _c2016
300			_a1 recurso en línea (XV, 116 p.) 71 il.
336			_aTexto (visual) _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
338			_aonline resource _bcr _2rdacarrier
490	1		_aSpringerBriefs in Applied Sciences and Technology _x2191-530X
505	0		_aIntroduction to On-chip Interconnects and Modeling -- Interconnect Modeling, CNT and GNR Structure, Properties and Characteristics -- FDTD Model for Crosstalk Analysis of CMOS Gate-Driven Coupled Copper Interconnects -- FDTD Model for Crosstalk Analysis of Multiwall Carbon Nanotube (MWCNT) Interconnects -- Crosstalk Modeling with Width Dependent MFP in MLGNR Interconnects Using FDTD Technique -- An Efficient US-FDTD Model for Crosstalk Analysis of On-chip Interconnects.
520			_aThe book provides accurate FDTD models for on-chip interconnects, covering most recent advancements in materials and design. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for CNT and GNR based interconnects are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR-based interconnects are also discussed in the book. The proposed models are validated with the HSPICE simulations. The book introduces the current research scenario in the modeling of on-chip interconnects. It presents the structure, properties, and characteristics of graphene based on-chip interconnects and the FDTD modeling of Cu based on-chip interconnects. The model considers the non-linear effects of CMOS driver as well as the transmission line effects of interconnect line that includes coupling capacitance and mutual inductance effects. In a more realistic manner, the proposed model includes the effect of width-dependent MFP of the MLGNR while taking into account the edge roughness.
650		7	_aNanotecnología _0comprobar BNE20011268513 _2embne _9158453
650		7	_aElectrónica _0comprobar BNE19900963053 _2embne _9138690
650	0	7	_aIngeniería _vCongresos y asambleas _0LocalX _2embne _9670301
700	1		_aKumar, V. Ramesh _0Local _9100866
700	1		_aPatnaik, Amalendu. _9100867 _0Local
830		0	_aSpringerBriefs in Applied Sciences and Technology _x2191-530X _9134085
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://link.springer.com/book/10.1007/978-981-10-0800-9 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
901			_ai9789811008009
907			_a.b12961152 _b10-10-17 _c21-11-16
942			_2lcc _cLE
945			_aTK5981 .K387 2016 EB _g1 _ieBOOK _j0 _lmae _o- _pEUR0.00 _q- _r- _sb _t15 _u0 _v0 _w0 _x0 _y.i11602004 _z06-04-17
988	0	0	_aEBOOK, EBSPRINGER
998			_am _a_alco _a_vill _b - - _cm _dz _e- _feng _gsi _h0