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| 008 | 160409s2016 gw | s |||| 0|eng d | ||
| 020 | _a9783319316536 | ||
| 040 | _aES-MaUEC | ||
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_aTK7871.95 _bT866 2016 |
|
| 082 | 0 | 4 | _a621.3815 |
| 245 | 1 | 0 |
_aTunneling Field Effect Transistor Technology _cedited by Lining Zhang, Mansun Chan |
| 260 |
_aCham _bSpringer International Publishing _c2016 |
||
| 300 |
_a1 recurso en línea (IX, 213 páginas) _b147 ilustraciones, 122 ilustraciones en color |
||
| 336 |
_aTexto _btxt _2rdacontent |
||
| 337 |
_aelectrónico _bc _2rdamedia |
||
| 338 |
_arecurso electrónico _bcr _2rdacarrier |
||
| 505 | 0 | _aSteep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation. | |
| 520 | 3 | _aThis book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs. | |
| 710 | 2 |
_aSpringerLink (Online service) _0Local _9106996 |
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_2lcc _cLE |
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| 988 | _aEBOOK, asignarmaterias , EBSPRINGER | ||
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_9139610 _aCircuitos electrónicos _0comprobar BNE19900974538 _2embne |
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| 650 | 7 |
_aElectrónica _0comprobar BNE19900963053 _2embne _9138690 |
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| 700 | 1 |
_aZhang, Lining. _eeditor literario _999099 _0Local |
|
| 700 | 1 |
_aChan, Mansun. _eeditor literario _999100 _0Local |
|
| 856 | 4 | 0 |
_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://link.springer.com/book/10.1007/978-3-319-31653-6 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid) |
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