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008			230126s2022 sz | s |||| 0|eng d
020			_a9783030777302
024	7		_a10.1007/978-3-030-77730-2 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.95 _b2022 EB
100	1		_aKhandelwal, Sourabh _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9686268
245	1	0	_aAdvanced SPICE Model for GaN HEMTs (ASM-HEMT) : _bA New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design _cby Sourabh Khandelwal
250			_a1st edition 2022
264		1	_aCham _bSpringer International Publishing _c2022
300			_a1 recurso en línea (XV, 188 páginas) _b162 ilustraciones, 138 ilustraciones a color
336			_atexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_aarchivo de texto _bPDF
505	0		_aIntroduction -- GaN Device Operation -- Introduction to device modeling -- Industry standard ASM-HEMT compact model - Introduction -- Core charge and current model in ASM-HEMT model -- Real device effects model in ASM-HEMT model -- Radio-frequency GaN modeling with ASM-HEMT model -- Power GaN device modeling with ASM-HEMT model -- Model quality testing -- Design-Technology Co-optimization with ASM-HEMT model.
520			_aThis book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
988			_aSpringer_Engineering_2022
650		7	_2embne _9162208 _aTransistores de efecto de campo
650		7	_2embne _9140004 _aSemiconductores
650		7	_2embne _9139614 _aCircuitos integrados
776	0	8	_iPrinted edition: _z9783030777296
776	0	8	_iPrinted edition: _z9783030777319
776	0	8	_iPrinted edition: _z9783030777326
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi-org.ezproxy.universidadeuropea.es/10.1007/978-3-030-77730-2 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b01/2023 _dz _eIG _zSI