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008			230126s2022 sz | s |||| 0|eng d
020			_a9783030777753
024	7		_a10.1007/978-3-030-77775-3 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.95 _b2022 EB
100	1		_aJenkins, Keith A., _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9686260 _d1953-
245	1	0	_aRF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors _cby Keith A. Jenkins
250			_a1st edition 2022
264		1	_aCham _bSpringer International Publishing _c2022
300			_a1 recurso en línea (XI, 168 páginas) _b128 ilustraciones, 87 ilustraciones a color
336			_atexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_aarchivo de texto _bPDF
505	0		_aIntroduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
520			_aThis book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics. .
988			_aSpringer_Engineering_2022
650		7	_2embne _9162208 _aTransistores de efecto de campo
776	0	8	_iPrinted edition: _z9783030777746
776	0	8	_iPrinted edition: _z9783030777760
776	0	8	_iPrinted edition: _z9783030777777
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi-org.ezproxy.universidadeuropea.es/10.1007/978-3-030-77775-3 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b01/2023 _dz _eIG _zSI