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005			20230125215836.0
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007			cr nn 008mamaa
008			230125s2022 sz | s |||| 0|eng d
020			_a9783030895143
024	7		_a10.1007/978-3-030-89514-3 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aQC589 _b2022 EB
100	1		_aFreeman, Yuri _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9686234
245	1	0	_aTantalum and Niobium-Based Capacitors : _bScience, Technology, and Applications _cby Yuri Freeman
250			_a2nd edition 2022
264		1	_aCham _bSpringer International Publishing _c2022
300			_a1 recurso en línea (XXI, 149 páginas) _b119 ilustraciones, 50 ilustraciones a color
336			_atexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_aarchivo de texto _bPDF
505	0		_aIntroduction -- 1: Major Degradation Mechanisms -- 2: Basic Technology -- 3: Applications -- 4: Conclusion.
520			_aThis book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors; Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics; Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics.
988			_aSpringer_Engineering_2022
650		7	_2embne _9667176 _aCondensadores eléctricos
650		7	_2embne _9686235 _aTántalo (Metal)
650		7	_2embne _9686236 _aNiobio
776	0	8	_iPrinted edition: _z9783030895136
776	0	8	_iPrinted edition: _z9783030895150
776	0	8	_iPrinted edition: _z9783030895167
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi-org.ezproxy.universidadeuropea.es/10.1007/978-3-030-89514-3 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b01/2023 _dz _eIG _zSI