000			03250nam a22004335i 4500
999			_c387586 _d387586
001			387586
003			ES-MaUEC
005			20230326132541.0
006			a||||fo|||| 00| 0
007			cr nn 008mamaa
008			220601s2005 sz | s |||| 0|eng d
020			_a9783031025525
024	7		_a10.1007/978-3-031-02552-5 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aQC585 _b2005 EB
100	1		_aKim, Young-Hee, _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687649 _d1972-
245	1	0	_aHF-Based High-K Dielectrics : _bProcess Development, Performance Characterization, and Reliability _cby Young-Hee Kim, Jack C. Lee
250			_a1st edition 2005
264		1	_aCham _bSpringer International Publishing _c2005
300			_a1 recurso en línea (X, 92 páginas)
336			_atexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_aarchivo de texto _bPDF
490	0		_aSynthesis Lectures on Solid State Materials and Devices _x1932-1724
505	0		_aIntroduction -- Hard- and Soft-Breakdown Characteristics of Ultrathin HfO2 Under Dynamic and Constant Voltage Stress -- Impact of High Temperature Forming Gas and D2 Anneal on Reliability of HfO2 Gate Dielectrics -- Effect of Barrier Height and the Nature of Bilayer Structure of HfO2 with Dual Metal Gate Technology -- Bimodal Defect Generation Rate by Low Barrier Height and its Impact on Reliability Characteristics.
520			_aIn this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
988			_aSynthesis Collection of Technology_2005
650		7	_2embne _9162208 _aTransistores de efecto de campo
650		7	_2embne _9673560 _aDispositivos MOS
650		7	_2embne _9687650 _aDieléctricos
700	1		_aLee, Jack C. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687651
776	0	8	_iPrinted edition: _z9783031014246
776	0	8	_iPrinted edition: _z9783031036804
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-031-02552-5 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b03/2023 _dz _esc _zSI