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003			ES-MaUEC
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007			cr nn 008mamaa
008			220601s2014 sz | s |||| 0|eng d
020			_a9783031025068
024	7		_a10.1007/978-3-031-02506-8 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.85 _b2014 EB
100	1		_aGachovska, Tanya Kirilova _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687611
245	1	0	_aTransient Electro-Thermal Modeling on Power Semiconductor Devices _cby Tanya Kirilova Gachovska, Jerry Hudgins, Bin Du, Enrico Santi
250			_a1st edition 2014
264		1	_aCham _bSpringer International Publishing _c2014
300			_a1 recurso en línea (XVI, 68 páginas)
336			_atexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_aarchivo de texto _bPDF
490	0		_aSynthesis Lectures on Power Electronics _x1931-9533
505	0		_aNomenclature -- Temperature Dependencies of Material and Device Parameters -- One-Dimensional Thermal Model -- Realization of Power IGBT and Diode Thermal Model -- References -- Authors' Biographies.
520			_aThis book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
988			_aSynthesis Collection of Technology_2014
650		7	_2embne _9140004 _aSemiconductores _xModelos matemáticos
650		7	_2embne _9140359 _aTransistores _xModelos matemáticos
700	1		_aHudgins, Jerry L. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687604
700	1		_aDu, Bin _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687612 _c(Electrical engineer)
700	1		_aSanti, Enrico _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687613 _c(College teacher)
776	0	8	_iPrinted edition: _z9783031013782
776	0	8	_iPrinted edition: _z9783031036347
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-031-02506-8 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b03/2023 _dz _esc _zSI