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_c387554 _d387554 |
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| 001 | 387554 | ||
| 003 | ES-MaUEC | ||
| 005 | 20230326094004.0 | ||
| 006 | a||||fo|||| 00| 0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 220601s2013 sz | s |||| 0|eng d | ||
| 020 | _a9783031024986 | ||
| 024 | 7 |
_a10.1007/978-3-031-02498-6 _2doi |
|
| 040 |
_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC |
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| 050 | 4 |
_aTK7871.85 _b2013 EB |
|
| 100 | 1 |
_aGachovska, Tanya K. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687603 |
|
| 245 | 1 | 0 |
_aModeling Bipolar Power Semiconductor Devices _cby Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus Bryant |
| 250 | _a1st edition 2013 | ||
| 264 | 1 |
_aCham _bSpringer International Publishing _c2013 |
|
| 300 | _a1 recurso en línea (VIII, 88 páginas) | ||
| 336 |
_atexto _btxt _2rdacontent |
||
| 337 |
_aelectrónico _bc _2rdamedia |
||
| 338 |
_arecurso electrónico _bcr _2rdacarrier |
||
| 347 |
_aarchivo de texto _bPDF |
||
| 490 | 0 |
_aSynthesis Lectures on Power Electronics _x1931-9533 |
|
| 505 | 0 | _aIntroduction to Power Semiconductor Device Modeling -- Physics of Power Semiconductor Devices -- Modeling of a Power Diode and IGBT -- IGBT Under an Inductive Load-Switching Condition in Simulink -- Parameter Extraction. | |
| 520 | _aThis book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. | ||
| 988 | _aSynthesis Collection of Technology_2013 | ||
| 650 | 7 |
_2embne _9140004 _aSemiconductores _xModelos matemáticos |
|
| 650 | 7 |
_2embne _9158453 _aNanotecnología |
|
| 700 | 1 |
_aHudgins, Jerry L. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687604 |
|
| 700 | 1 |
_aSanti, Enrico _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687613 _c(College teacher) |
|
| 700 | 1 |
_aBryant, Angus _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687605 |
|
| 776 | 0 | 8 |
_iPrinted edition: _z9783031013706 |
| 776 | 0 | 8 |
_iPrinted edition: _z9783031036262 |
| 856 | 4 | 0 |
_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-031-02498-6 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid) |
| 942 |
_2lcc _cLE |
||
| 998 |
_b03/2023 _dz _esc _zSI |
||