000			03159nam a22004575i 4500
999			_c387324 _d387324
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007			cr nn 008mamaa
008			220601s2016 sz | s |||| 0|eng d
020			_a9783031020285
024	7		_a10.1007/978-3-031-02028-5 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.99.C65 _b2016 EB
100	1		_aLiu, Zhaojun _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687323 _c(Electronics engineer)
245	1	0	_aCompound Semiconductor Materials and Devices _cby Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou
250			_a1st edition 2016
264		1	_aCham _bSpringer International Publishing _c2016
300			_a1 recurso en línea (VII, 65 páginas)
336			_atexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_aarchivo de texto _bPDF
490	0		_aSynthesis Lectures on Emerging Engineering Technologies _x2381-1439
505	0		_aIntroduction -- GaN-based HEMTs and MOSHEMTs -- III-V Materials and Devices -- Summary -- References -- Authors' Biographies .
520			_aEver since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
988			_aSynthesis Collection of Technology_2016
650		7	_2embne _9162208 _aTransistores de efecto de campo
650		7	_2embne _9140004 _aSemiconductores
700	1		_aHuang, Tongde _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687324
700	1		_aLi, Q. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687325 _d1943- _q(Qiang)
700	1		_aXing, Lu _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687326
700	1		_aZou, Xinbo _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9687327
776	0	8	_iPrinted edition: _z9783031009006
776	0	8	_iPrinted edition: _z9783031031564
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-031-02028-5 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b03/2023 _dz _esc _zSI