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008			220601s2012 sz | s |||| 0|eng d
020			_a9783031017353
024	7		_a10.1007/978-3-031-01735-3 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7895.M4 _b2012 EB
100	1		_aMuralimanohar, Naveen _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9686839
245	1	0	_aPhase Change Memory : _bFrom Devices to Systems _cby Naveen Muralimanohar, Moinuddin K. Qureshi, Sudhanva Gurumurthi, Bipin Rajendran
250			_a1st edition 2012
264		1	_aCham _bSpringer International Publishing _c2012
300			_a1 recurso en línea (XIV, 122 páginas)
336			_atexto _btxt _2rdacontent
337			_aelectrónico _bc _2rdamedia
338			_arecurso electrónico _bcr _2rdacarrier
347			_aarchivo de texto _bPDF
490	0		_aSynthesis Lectures on Computer Architecture _x1935-3243
505	0		_aNext Generation Memory Technologies -- Architecting PCM for Main Memories -- Tolerating Slow Writes in PCM -- Wear Leveling for Durability -- Wear Leveling Under Adversarial Settings -- Error Resilience in Phase Change Memories -- Storage and System Design With Emerging Non-Volatile Memories.
520			_aAs conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories.
988			_aSynthesis Collection of Technology_2012
650		7	_2embne _9670359 _aDispositivos de almacenamiento de datos
650		7	_2embne _9673059 _aGestión de memoria
650		7	_2embne _9686840 _aMemorias de semiconductores
700	1		_aQureshi, Moinuddin Khalil Ahmed, _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9686841 _d1978-
700	1		_aGurumurthi, Sudhanva _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9686842
700	1		_aRajendran, Bipin _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _9686843
776	0	8	_iPrinted edition: _z9783031006074
776	0	8	_iPrinted edition: _z9783031028632
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-031-01735-3 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b02/2023 _dz _esc _zSI