000			03978nam a22004215i 4500
999			_c361891 _d361891 _x1
001			361891
003			ES-MaUEC
005			20230102121440.0
006			a||||fo|||| 00| 0
007			cr nn 008mamaa
008			220124s2021 sz | s |||| 0|eng d
020			_a9783030689407
024	7		_a10.1007/978-3-030-68940-7 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.9 _b2021 EB
100	1		_aSeidel, Achim _eautor _4http://id.loc.gov/vocabulary/relators/aut _9681054
245	1	0	_aHighly Integrated Gate Drivers for Si and GaN Power Transistors _cby Achim Seidel, Bernhard Wicht
250			_aFirst edition 2021
264		1	_aCham _bSpringer International Publishing _c2021
300			_a1 recurso en línea (XVII, 124 páginas) _b 72 ilustraciones, 56 ilustraciones a color
336			_2rdacontent _aTexto _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_aarchivo de texto _bPDF
490	0		_aEngineering (SpringerNature-11647)
490	0		_aEngineering (R0) (SpringerNature-43712)
505	0		_aChapter 1. Introduction -- Chapter 2. Fundamentals -- Chapter 3. Gate Drivers Based on High-Voltage Charge Storing (HVCS) -- Chapter 4. Gate Drivers Based on High-Voltage Energy Storing (HVES) -- Chapter 5. Gate Drivers for Large Gate Loops Based on HVES -- Chapter 6. Outlook and FutureWork -- Chapter 7. Conclusion.
520	3		_aThis book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions. Provides readers with a comprehensive, all-in-one source for gate driver IC design, including implementation examples; Introduces new gate drive concepts including theory and design guidelines; Describes new gate driver architectures based on the presented gate drive concepts; Includes circuit design solutions, design aspects, and experimental verification of the implemented gate drivers; Covers the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
988			_aSpringer_Engineering_2021
650		7	_2embne _9141599 _aCircuitos de transistores
700	1		_aWicht, B. _eautor _4http://id.loc.gov/vocabulary/relators/aut _9676884 _d1970- _q(Bernhard),
776	0	8	_iPrinted edition: _z9783030689391
776	0	8	_iPrinted edition: _z9783030689414
776	0	8	_iPrinted edition: _z9783030689421
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-030-68940-7 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b01/2022 _dz _eIG _zSI