000			04249nam a2200445 c 4500
988			_aSpringer_Engineering_2020
999			_c114414 _d114414 _x1
001			114414
003			ES-MaUEC
005			20230110040221.0
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007			cr nn nnnaamaa
008			190801s2020 gw a o |||| 0|eng d
020			_a9783030202088
024	7		_a10.1007/978-3-030-20208-8 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.15 .G33 _b2020 EB
245	0	0	_aHigh-frequency GaN electronic devices _cedited by Patrick Fay, Debdeep Jena, Paul Maki
250			_aFirst edition
264		1	_aCham _bSpringer International Publishing _c2020
300			_a1 recurso en línea (VIII, 309 páginas) _b221 ilustraciones, 199 ilustraciones a color
336			_2rdacontent _aTexto _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_atext file _bPDF
490	0		_aEngineering (Springer-11647)
505	0		_aChapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
520	3		_aThis book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides "vertically integrated" coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
650		7	_2embne _aComponentes electrónicos _9153705
650		7	_2embne _9140359 _aTransistores
650		7	_2embne _aSemiconductores _9140004
700	1		_aFay, Patrick _eeditor _4edt _4http://id.loc.gov/vocabulary/relators/edt
700	1		_aJena, Debdeep _eeditor _4edt _4http://id.loc.gov/vocabulary/relators/edt
700	1		_aMaki, Paul _eeditor _4edt _4http://id.loc.gov/vocabulary/relators/edt
776	0	8	_iPrinted edition: _z9783030202071
776	0	8	_iPrinted edition: _z9783030202095
776	0	8	_iPrinted edition: _z9783030202101
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-030-20208-8 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_aSI _cm _dz _feng _ggw _h0 _b12/2019 _eel _zSI