| 000 | 03103nam a22004215i 4500 | ||
|---|---|---|---|
| 710 | 2 |
_aSpringerLink (Online service) _9106996 |
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| 999 |
_c110844 _d110844 |
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| 001 | 110844 | ||
| 003 | ES-MaUEC | ||
| 005 | 20230102113441.0 | ||
| 006 | a||||fo|||| 00| 0 | ||
| 007 | cr nn nnnaamaa | ||
| 008 | 181213s2019 gw a o |||| 0|eng d | ||
| 020 | _a9783030045135 | ||
| 024 | 7 |
_a10.1007/978-3-030-04513-5 _2doi |
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| 040 |
_bspa _dES-MaUEC _cES-MaUEC |
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| 050 | 4 |
_aTK7871.85 _b2019 EB |
|
| 100 | 1 |
_aAmiri, Iraj Sadegh, _eautor _9670537 _d1977- |
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| 245 | 1 | 0 |
_aDevice Physics, Modeling, Technology, and Analysis for Silicon MESFET _cby Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry. |
| 264 | 1 |
_aCham _bImprint: Springer _c2019 |
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| 300 |
_a1 recurso en línea (IX, 122 páginas) _b51 ilustraciones, 27 ilustraciones a color |
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| 336 |
_2rdacontent _aTexto _btxt |
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| 337 |
_2rdamedia _aelectrónico _bc |
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| 338 |
_2rdacarrier _arecurso electrónico _bcr |
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| 347 |
_atext file _bPDF |
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| 490 | 0 | _aEngineering (Springer-11647) | |
| 505 | 0 | _aChapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs). | |
| 520 | 3 | _aThis book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs. | |
| 650 | 7 |
_2embne _aSemiconductores _9140004 |
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| 650 | 7 |
_2embne _9144216 _aSilicio |
|
| 700 | 1 |
_aHosseinghadiry, Mahdiar. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut |
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| 700 | 1 |
_aMohammadi, Hossein. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut |
|
| 776 | 0 | 8 |
_iPrinted edition: _z9783030045128 |
| 776 | 0 | 8 |
_iPrinted edition: _z9783030045142 |
| 856 | 4 | 0 |
_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-030-04513-5 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid) |
| 942 |
_2lcc _cLE |
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| 988 | _aPrimersemestre_2019_Engineering | ||
| 998 |
_aSI _cm _dz _feng _ggw _h0 _b10/2019 _ek _zSI |
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