000			03572nam a2200409 i 4500
710	2		_aSpringerLink (Online service) _9106996
999			_c110721 _d110721
001			110721
003			ES-MaUEC
005			20230102113435.0
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007			cr nn nnnaamaa
008			180928s2019 gw a o |||| 0|eng d
020			_a9783319939889
024	7		_a10.1007/978-3-319-93988-9 _2doi
040			_bspa _dES-MaUEC _cES-MaUEC
050		4	_aTK7871.85 _b2019 EB
100	1		_aBaliga, B. Jayant, _eautor _9670919 _d1948-
245	1	0	_aFundamentals of Power Semiconductor Devices _cby B. Jayant Baliga
250			_a2nd ed. 2019.
264		1	_aCham _bSpringer _c2019
300			_a1 recurso en línea (XXXII, 1086 páginas) _b838 ilustraciones, 559 ilustraciones a color
336			_2rdacontent _aTexto _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_atext file _bPDF
490	0		_aEngineering (Springer-11647)
505	0		_aIntroduction -- Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Insulated Gate Bipolar Thyristors -- Synopsis.
520	3		_aThis textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions. Provides comprehensive textbook for courses on physics of power semiconductor devices; Includes extensive analytical formulations for design and analysis of device structures; Uses numerical simulation examples in every section to elucidate the operating physics and validate the models; Analyzes device performance attributes that enable development of real, energy-efficient products; Includes numerous exercises in each chapter to reinforce concepts introduced; Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
650		7	_2embne _aSemiconductores _9140004
776	0	8	_iPrinted edition: _z9783030067656
776	0	8	_iPrinted edition: _z9783319939872
776	0	8	_iPrinted edition: _z9783319939896
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-93988-9 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
988			_aPrimersemestre_2019_Engineering
998			_aSI _cm _dz _feng _ggw _h0 _b10/2019 _eu _zSI