| 000 | 03434nam a22003855i 4500 | ||
|---|---|---|---|
| 001 | 104020 | ||
| 003 | DE-He213 | ||
| 005 | 20230102113156.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 150310s2015 gw | s |||| 0|eng d | ||
| 020 | _a9783319108193 | ||
| 024 | 7 |
_a10.1007/978-3-319-10819-3 _2doi |
|
| 040 |
_aES-MaUEC _bspa _cES-MaUEC |
||
| 050 | 4 | _aTK7874.78 2015 EB | |
| 100 | 1 |
_aCui, Qiang _eautor _9669764 |
|
| 245 | 1 | 0 |
_aOn-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits _cby Qiang Cui, Juin J. Liou, Jean-Jacques Hajjar, Javier Salcedo, Yuanzhong Zhou, Parthasarathy Srivatsan. |
| 264 | 1 |
_aCham _bSpringer International Publishing _c2015 |
|
| 300 | _a1 recurso en línea (XVII, 86 páginas 59 ilustraciones, 42 ilustraciones a color.) | ||
| 505 | 0 | _aBasics in ESD Protection of Radio Frequency Integrated Circuits -- On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process -- Design of SiGe SCR devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process -- On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process -- Conclusion. | |
| 520 | 3 | _aThis book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs' ESD safety level, while maximizing RF performance. Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies; Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS); Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance. | |
| 650 | 7 |
_aCircuitos integrados _2embne _9139614 |
|
| 650 | 7 |
_aSistemas de identificación por radiofrecuencia _2embne _9427826 |
|
| 700 | 1 |
_aLiou, Juin J. _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _0http://id.loc.gov/authorities/names/n93104714 _1http://viaf.org/viaf/37006991/ _967164 |
|
| 700 | 1 |
_aHajjar, Jean-Jacques _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut |
|
| 700 | 1 |
_aSalcedo, Javier _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _0http://id.loc.gov/authorities/names/n2013044049 _1http://viaf.org/viaf/81075662/ |
|
| 700 | 1 |
_aZhou, Yuanzhong _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut |
|
| 700 | 1 |
_aSrivatsan, Parthasarathy _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut |
|
| 776 | 0 | 8 |
_iEdición impresa: _z9783319108186 |
| 776 | 0 | 8 |
_iEdición impresa: _z9783319108209 |
| 776 | 0 | 8 |
_iEdición impresa: _z9783319358246 |
| 856 | 4 | 0 |
_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-10819-3 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid) |
| 490 | 0 | _aEngineering (Springer-11647) | |
| 988 | _aEBSPRINGER_2018 | ||
| 998 |
_b06/2019 _dz _ek _feng _ggw _h0 |
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| 999 |
_c104020 _d104020 _x1 |
||