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008 150310s2015 gw | s |||| 0|eng d
020 _a9783319108193
024 7 _a10.1007/978-3-319-10819-3
_2doi
040 _aES-MaUEC
_bspa
_cES-MaUEC
050 4 _aTK7874.78 2015 EB
100 1 _aCui, Qiang
_eautor
_9669764
245 1 0 _aOn-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits
_cby Qiang Cui, Juin J. Liou, Jean-Jacques Hajjar, Javier Salcedo, Yuanzhong Zhou, Parthasarathy Srivatsan.
264 1 _aCham
_bSpringer International Publishing
_c2015
300 _a1 recurso en línea (XVII, 86 páginas 59 ilustraciones, 42 ilustraciones a color.)
505 0 _aBasics in ESD Protection of Radio Frequency Integrated Circuits -- On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process -- Design of SiGe SCR devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process -- On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process -- Conclusion.
520 3 _aThis book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs' ESD safety level, while maximizing RF performance. Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies; Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS); Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance.
650 7 _aCircuitos integrados
_2embne
_9139614
650 7 _aSistemas de identificación por radiofrecuencia
_2embne
_9427826
700 1 _aLiou, Juin J.
_eautor
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_0http://id.loc.gov/authorities/names/n93104714
_1http://viaf.org/viaf/37006991/
_967164
700 1 _aHajjar, Jean-Jacques
_eautor
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
700 1 _aSalcedo, Javier
_eautor
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_0http://id.loc.gov/authorities/names/n2013044049
_1http://viaf.org/viaf/81075662/
700 1 _aZhou, Yuanzhong
_eautor
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
700 1 _aSrivatsan, Parthasarathy
_eautor
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
776 0 8 _iEdición impresa:
_z9783319108186
776 0 8 _iEdición impresa:
_z9783319108209
776 0 8 _iEdición impresa:
_z9783319358246
856 4 0 _uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-10819-3
_zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
490 0 _aEngineering (Springer-11647)
988 _aEBSPRINGER_2018
998 _b06/2019
_dz
_ek
_feng
_ggw
_h0
999 _c104020
_d104020
_x1