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008			141211s2015 xxu| s |||| 0|eng d
020			_a9781493911516
024	7		_a10.1007/978-1-4939-1151-6 _2doi
040			_bspa _dES-MaUEC
050		4	_aTK7871.85 _b2015 EB
100	1		_aRudan, Massimo. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _0http://id.loc.gov/authorities/names/no2010146078 _1http://viaf.org/viaf/144667764/
245	1	0	_aPhysics of Semiconductor Devices _cby Massimo Rudan.
264		1	_aNew York, NY _bSpringer International Publishing _c2015
300			_a1 recurso en línea (XXIII, 649 páginas 158 ilustraciones)
336			_2rdacontent _aTexto (visual) _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
490	0		_aEngineering (Springer-11647)
505	0		_aPart I A Review of Analytical Mechanics and Electromagnetism -- Analytical Mechanics -- Coordinate Transformations and Invariance Properties -- Applications of the Concepts of Analytical Mechanics -- Electromagnetism -- Applications of the Concepts of Electromagnetism -- Part II Introductory Concepts to Statistical and Quantum Mechanics -- Classical Distribution Function and Transport Equation -- From Classical Mechanics to Quantum Mechanics -- Time-Independent Schrodinger Equation -- Time-Dependent Schrodinger Equation -- General Methods of Quantum Mechanics -- Part III Applications of the Schrodinger Equation -- Elementary Cases -- Cases Related to the Linear Harmonic Oscillator -- Other Examples of the Schrodinger Equation -- Time-Dependent Perturbation Theory -- Part IV Systems of Interacting Particles- Quantum Statistics -- Many-Particle Systems -- Separation of Many-Particle Systems -- Part V Applications to Semiconducting Crystals -- Periodic Structures -- Electrons and Holes in Semiconductors at Equilibrium -- Part VI Transport Phenomena in Semiconductors -- Mathematical Model of Semiconductor Devices -- Generation-Recombination and Mobility -- Part VII Basic Semiconductor Devices -- Bipolar Devices -- MOS Devices -- Part VIII Miscellany -- Thermal Diffusion -- Thermal Oxidation- Layer Deposition -- Measuring the Semiconductor Parameters.
520	3		_aThis book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
988			_aEBSPRINGER_2018
650		7	_aSemiconductores _2embne _9140004
776	0	8	_iEdición impresa: _z9781493911509
776	0	8	_iEdición impresa: _z9781493911523
776	0	8	_iEdición impresa: _z9781493946990
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-1-4939-1151-6 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b03/2019 _dz _eIG _zSI