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_c103735 _d103735 _x1 |
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| 001 | 103735 | ||
| 003 | DE-He213 | ||
| 005 | 20230102113144.0 | ||
| 006 | a||||fo|||| 00| 0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 150305s2015 ja | s |||| 0|eng d | ||
| 020 | _a9784431553724 | ||
| 024 | 7 |
_a10.1007/978-4-431-55372-4 _2doi |
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| 040 |
_bspa _dES-MaUEC |
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| 050 | 4 |
_aTA455.G65 _bF766 2015 EB |
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| 245 | 1 | 0 |
_aFrontiers of Graphene and Carbon Nanotubes _bDevices and Applications _cedited by Kazuhiko Matsumoto. |
| 264 | 1 |
_aTokyo _bSpringer International Publishing _c2015 |
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| 300 | _a1 recurso en línea (XVIII, 289 páginas 214 ilustraciones, 183 ilustraciones a color.) | ||
| 336 |
_2rdacontent _aTexto (visual) _btxt |
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| 337 |
_2rdamedia _aelectrónico _bc |
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| 338 |
_2rdacarrier _arecurso electrónico _bcr |
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| 490 | 0 | _aEngineering (Springer-11647) | |
| 505 | 0 | _aCVD Growth of High-Quality Single-Layer Graphene -- Graphene Laser Irradiation CVD Growth -- Graphene Direct Growth on Si/SiO2 Substrates -- Direct growth of graphene and graphene nanoribbon on an insulating substrate by rapid-heating plasma CVD -- Graphene/metal contact -- Low-temperature Synthesis of Graphene and Fabrication of Top-gated Field Effect Transistors Using Transfer-Free Processes for Future LSIs -- Graphene Biosensor -- Graphene Terahertz Devices -- Carbon nanotube synthesis and the role of catalyst -- Aligned Single-Walled Carbon Nanotube Growth on Patterned SiO2/Si Substrates -- Plasma doping processes for CNT devices -- Stochastic Resonance Effect on Carbon Nanotube Field-Effect Transistors -- Electrochemical Biological sensors Based on Directly Synthesized Carbon Nanotube Electrodes -- Nanomechanical application of CNT -- Carbon Nanotube Quantum Nanomemory -- Control of Particle nature & Wave nature of Electron in CNT -- Quantum Dot Devices with Carbon Nanotubes -- High-mobility Thin Film Transistors for Flexible Electronics Applications. | |
| 520 | 3 | _aThis book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials. This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes. It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. We strongly hope this book contributes to its development. | |
| 988 | _aEBSPRINGER_2018 | ||
| 650 | 7 |
_9668261 _aGrafenos |
|
| 700 | 1 |
_aMatsumoto, Kazuhiko. _eeditor literario _4edt _4http://id.loc.gov/vocabulary/relators/edt _1http://viaf.org/viaf/49160669/ _1http://dbpedia.org/resource/Kazuhiko_Matsumoto |
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| 776 | 0 | 8 |
_iEdición impresa: _z9784431553731 |
| 776 | 0 | 8 |
_iEdición impresa: _z9784431553717 |
| 776 | 0 | 8 |
_iEdición impresa: _z9784431563464 |
| 856 | 4 | 0 |
_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-4-431-55372-4 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid) |
| 942 |
_2lcc _cLE |
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| 998 |
_b03/2019 _dz _eIG _zSI |
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