000			03613nam a22003735i 4500
999			_c103617 _d103617 _x1
001			103617
003			DE-He213
005			20230102113138.0
006			a||||fo|||| 00| 0
007			cr nn 008mamaa
008			141025s2015 gw | s |||| 0|eng d
020			_a9783319102955
024	7		_a10.1007/978-3-319-10295-5 _2doi
040			_bspa _dES-MaUEC
050		4	_aTA2020 _b.N655 2015 EB
100	1		_aNojiri, Kazuo. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _1http://viaf.org/viaf/254956379/
245	1	0	_aDry Etching Technology for Semiconductors _cby Kazuo Nojiri.
264		1	_aCham _bSpringer International Publishing _c2015
300			_a1 recurso en línea (XIII, 116 páginas 123 ilustraciones)
336			_2rdacontent _aTexto (visual) _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
490	0		_aEngineering (Springer-11647)
505	0		_aContribution of Dry Etching Technology to Progress of Semiconductor Integrated Circuit -- Mechanism of Dry Etching -- Dry Etching of Various Materials -- Dry Etching Equipments -- Dry Etching Damage -- Latest Dry Etching Technologies -- Future Challenges and Outlook for Dry Etching Technology.
520	3		_aThis book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc. Provides a comprehensive, systematic guide to dry etching technologies, from basics to latest technologies; Enables beginners to understand the mechanisms of dry etching, without complexities of numerical formulas/equations; Describes etching processes for all materials which are used in semiconductor devices, explains key etching parameters for each material, and explains why a particular plasma source and etching gas chemistry is used for each material; Discusses the device manufacturing flow and explains in which part of device manufacturing dry etching is actually used; Describes the types and plasma generation mechanism of etching equipment which are actually used in semiconductor fabs, such as CCP (Capacitively Coupled Plasma), Magnetron RIE (Magnetron Reactive Ion Etching), ECR (Electron Cyclotron Resonance) Plasma, and ICP (Inductively Coupled Plasma).
988			_aEBSPRINGER_2018
650		7	_aSemiconductores _2embne _9140004
776	0	8	_iEdición impresa: _z9783319102962
776	0	8	_iEdición impresa: _z9783319102948
776	0	8	_iEdición impresa: _z9783319356242
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-10295-5 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b03/2019 _dz _eIG _zSI