000			03686nam a22003735i 4500
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005			20230102113130.0
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007			cr nn 008mamaa
008			140806s2015 gw | s |||| 0|eng d
020			_a9783319080789
024	7		_a10.1007/978-3-319-08078-9 _2doi
040			_bspa _dES-MaUEC _cES-MaUEC
050		4	_aTL589.2.A3 _b2015 EB
100	1		_aLevinzon, Felix. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut
245	1	0	_aPiezoelectric Accelerometers with Integral Electronics _cby Felix Levinzon.
264		1	_aCham _bSpringer International Publishing _c2015
300			_a1 recurso en línea (XV, 169 páginas 99 ilustraciones, 37 ilustraciones a color.)
336			_2rdacontent _aTexto (visual) _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
490	0		_aEngineering (Springer-11647)
505	0		_aIntroduction to Piezoelectric Accelerometers with Integral Electronics -- Piezoelectric Transducers Used for Piezoelectric Accelerometers with Integral Electronics -- Integral FET Amplifiers Used for IEPE Accelerometers -- Noise of a FET Amplifier -- Comparison of 1/f Noise and Thermal Noise in JFETs and MOSFETs -- Fundamental Noise Limit of an IEPE Accelerometer -- Noise of and IEPE Accelerometer -- Ultra-low-noise IEPE Seismic Accelerometers -- High-temperature, up to 175 ºC, Miniature IEPE Accelerometers.
520	3		_aThis book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics  useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/√Hz). The discussion also includes ultra-low-noise (at level of 3 ng/√Hz) seismic IEPE accelerometers and high temperature (up to 175 ̊C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. • Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; • Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; • Describes recently design of ultra-low-noise (at level of 3 ng/√Hz) IEPE seismic accelerometers and high temperature (up to 175 ̊C) triaxial and single axis miniature IEPE accelerometers; • Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/√Hz) JFET; • Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.
988			_aEBSPRINGER_2018
650		7	_aAviones _2embne _vAparatos e instrumentos _9138154
776	0	8	_iEdición impresa: _z9783319080772
776	0	8	_iEdición impresa: _z9783319080796
776	0	8	_iEdición impresa: _z9783319356112
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-08078-9 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b03/2019 _dz _eIG _zSI