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008			171030s2018 si | s |||| 0|eng d
020			_a9789811065507
024	7		_a10.1007/978-981-10-6550-7 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.95 _bA457 2018 EB
100	1		_aAmiri, Iraj Sadegh, _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut _1http://viaf.org/viaf/311471994/ _9670537 _d1977-
245	1	0	_aAnalytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor _cby Iraj Sadegh Amiri, Mahdiar Ghadiry.
264		1	_aSingapore _bSpringer International Publishing _c2018
300			_a1 recurso en línea (IX, 86 páginas 55 ilustraciones, 16 ilustraciones a color)
336			_2rdacontent _aTexto (visual) _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_atext file _bPDF
490	0		_aSpringerBriefs in Applied Sciences and Technology _x2191-530X
490	0		_aEngineering (Springer-11647)
505	0		_aIntroduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene.
520	3		_aThis book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss's law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
988			_aEBSPRINGER_2018
650		7	_aTransistores de efecto de campo _9162208 _2embne
650		7	_aNanotecnología _2embne _9158453
700	1		_aGhadiry, Mahdiar _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut
776	0	8	_iEdición impresa: _z9789811065491
776	0	8	_iEdición impresa: _z9789811065514
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-981-10-6550-7 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b02/2019 _dz _ek _feng _ggw _h0