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001			102856
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008			170906s2018 si | s |||| 0|eng d
020			_a9789811052903
024	7		_a10.1007/978-981-10-5290-3 _2doi
050		4	_aTK7888.4 _bA345 2018 EB
100	1		_aAdhikary, Sourav _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut
245	1	0	_aQuaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors _bFrom Materials to Devices _cby Sourav Adhikary, Subhananda Chakrabarti.
264		1	_aSingapore _bSpringer International Publishing _c2018
300			_a1 recurso en línea (XIII, 63 páginas 35 ilustraciones, 16 ilustraciones a color.)
347			_atext file _bPDF
505	0		_aChapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.
520	3		_aThis book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and  responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
650		7	_aElectrónica digital _2embne _9141102
700	1		_aChakrabarti, Subhananda _eautor _4aut _4http://id.loc.gov/vocabulary/relators/aut
776	0	8	_iEdición impresa: _z9789811052897
776	0	8	_iEdición impresa: _z9789811052910
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-981-10-5290-3 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
490	0		_aEngineering (Springer-11647)
988			_aEBSPRINGER_2018
998			_b01/2019 _dz _ea _feng _ggw _h0
999			_c102856 _d102856 _x1