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020 _a9789811046124
024 7 _a10.1007/978-981-10-4612-4
_2doi
050 4 _aTK7871.96.B55
_bS869 2018 EB
100 1 _aSun, Yabin
_eautor
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_1http://viaf.org/viaf/348150264365405860006/
245 1 0 _aResearch on the Radiation Effects and Compact Model of SiGe HBT
_cby Yabin Sun.
264 1 _aSingapore
_bSpringer International Publishing
_c2018
300 _a1 recurso en línea (XXIV, 168 páginas 171 ilustraciones)
347 _atext file
_bPDF
490 0 _aSpringer Theses, Recognizing Outstanding Ph.D. Research
_x2190-5053
505 0 _aIntroduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
520 3 _aThis book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
650 7 _aSemiconductores
_2embne
_9140004
650 7 _aCircuitos de transistores
_9141599
776 0 8 _iEdición impresa:
_z9789811046117
776 0 8 _iEdición impresa:
_z9789811046131
856 4 0 _uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-981-10-4612-4
_zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
490 0 _aEngineering (Springer-11647)
988 _aEBSPRINGER_2018
998 _b01/2019
_dz
_ea
_feng
_ggw
_h0
999 _c102822
_d102822
_x1