000			03461nam a22004335i 4500
999			_c102745 _d102745
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007			cr nn 008mamaa
008			180216s2018 gw | s |||| 0|eng d
020			_a9783319709178
024	7		_a10.1007/978-3-319-70917-8 _2doi
040			_bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.85 _bL889 2018 EB
100	1		_aLutz, Josef. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _0http://id.loc.gov/authorities/names/no2012126426 _1http://viaf.org/viaf/27080927/
245	1	0	_aSemiconductor Power Devices _bPhysics, Characteristics, Reliability _cby Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker.
250			_a2nd edition
264		1	_aCham _bSpringer International Publishing _c2018
300			_a1 recurso en línea (XIX, 714 páginas 480 ilustraciones, 132 ilustraciones a color.)
336			_2rdacontent _aTexto _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_atext file _bPDF
490	0		_aEngineering (Springer-11647)
505	0		_aPower Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
520	3		_aThis book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
988			_aEBSPRINGER_2018
650		7	_2embne _9140004 _aSemiconductores
700	1		_aSchlangenotto, Heinrich. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _1http://viaf.org/viaf/5376148037711488350000/
700	1		_aScheuermann, Uwe. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _1http://viaf.org/viaf/123924984/
700	1		_aDe Doncker, Rik. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _1http://viaf.org/viaf/101173235/
776	0	8	_iEdición impresa: _z9783319709161
776	0	8	_iEdición impresa: _z9783319709185
776	0	8	_iEdición impresa: _z9783319890111
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-70917-8 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE