000			02938nam a22004335i 4500
710	2		_aSpringerLink (Online service) _0http://id.loc.gov/authorities/names/no2005046756 _1http://viaf.org/viaf/274647764/ _9106996
999			_c102683 _d102683 _x1
001			102683
003			ES-MaUEC
005			20230102113054.0
006			a||||fo|||| 00| 0
007			cr nn 008mamaa
008			171228s2018 gw | s |||| 0|eng d
020			_a9783319725567
024	7		_a10.1007/978-3-319-72556-7 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.96.T45 _b2018 EB
100	1		_aVidor, Fábio Fedrizzi _eautor _9673084
245	1	0	_aZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics _cby Fábio Fedrizzi Vidor, Gilson Inácio Wirth, Ulrich Hilleringmann.
264		1	_aCham _bSpringer International Publishing _c2018
300			_a1 recurso en línea (XVII, 179 páginas) _bilustraciones
336			_2rdacontent _aTexto _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_atext file _bPDF
490	0		_aEngineering (Springer-11647)
505	0		_aChapter 1.Introduction -- Chapter 2.Fundamentals -- Chapter 3.Integration -- Chapter 4. Zinc Oxide Transistors -- Chapter 5.Electronic Circuits -- Chapter 6.Improvements -- Chapter 7.Conclusion and Future Perspectives.
520	3		_aThis book describes the integration, characterization and analysis of cost-efficient thin-film transistors (TFTs), applying zinc oxide as active semiconductors.  The authors discuss soluble gate dielectrics, ZnO precursors, and dispersions containing nanostructures of the material, while different transistor configurations are analyzed with respect to their integration, compatibility, and device performance.  Additionally, simple circuits (inverters and ring oscillators) and a complementary design employing (in)organic semiconducting materials are presented and discussed.  Readers will benefit from concise information on cost-efficient materials and processes, applied in flexible and transparent electronic technology, such as the use of solution-based materials and dispersion containing nanostructures, as well as discussion of the physical fundamentals responsible for the operation of the thin-film transistors and the non-idealities of the device.
988			_aEBSPRINGER_2018
650		7	_2embne _9140359 _aTransistores
650		7	_2embne _aIngeniería de sistemas _9138451
700	1		_aWirth, Gilson _9673085 _eautor
700	1		_aHilleringmann, Ulrich _eautor _9673086
776	0	8	_iEdición impresa: _z9783319725550
776	0	8	_iEdición impresa: _z9783319725574
776	0	8	_iEdición impresa: _z9783319891880
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-72556-7 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b04/2020 _dz _ek _zSI