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020 _a9789811061653
024 7 _a10.1007/978-981-10-6165-3
_2doi
040 _bspa
_cES-MaUEC
_dES-MaUEC
050 4 _aTK7874.84
_bC446 2018 EB
100 1 _aCheng, Jie
_0http://id.loc.gov/authorities/names/n78039874
_1http://viaf.org/viaf/4957151/
245 1 0 _aResearch on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
_cby Jie Cheng.
264 1 _aSingapore
_bSpringer International Publishing
_c2018
300 _a1 recurso en línea (XVIII, 137 páginas 103 ilustraciones)
336 _2rdacontent
_aTexto
_btxt
337 _2rdamedia
_aelectrónico
_bc
338 _2rdacarrier
_arecurso electrónico
_bcr
347 _atext file
_bPDF
490 0 _aSpringer Theses, Recognizing Outstanding Ph.D. Research,
_x2190-5053
490 0 _aEngineering (Springer-11647)
520 3 _aThis thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
988 _aEBSPRINGER_2018
650 7 _2embne
_9139614
_aCircuitos integrados
710 2 _aSpringerLink (Online service)
_0http://id.loc.gov/authorities/names/no2005046756
_1http://viaf.org/viaf/274647764/
_9106996
776 0 8 _iEdición impresa:
_z9789811061646
776 0 8 _iEdición impresa:
_z9789811061660
856 4 0 _uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-981-10-6165-3
_zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942 _2lcc
_cLE