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999			_c102508 _d102508
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008			170621s2018 si | s |||| 0|eng d
020			_a9789811030666
024	7		_a10.1007/978-981-10-3066-6 _2doi
040			_bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.99.M44 _bW898 2018 EB
100	1		_aWu, Yung-Chun. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _1http://viaf.org/viaf/5252691/
245	1	0	_a3D TCAD Simulation for CMOS Nanoeletronic Devices _cby Yung-Chun Wu, Yi-Ruei Jhan.
264		1	_aSingapore _bSpringer International Publishing _c2018
300			_a1 recurso en línea (XIII, 330 páginas 243 ilustraciones, 240 ilustraciones a color.)
336			_2rdacontent _aTexto _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_atext file _bPDF
490	0		_aEngineering (Springer-11647)
505	0		_aIntroduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools -- Simulation analysis of 2D MOSFET -- Simulation analysis of 3D FinFET with LG = 15 nm -- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm -- Simulation analysis of GAA NWFET -- Simulation analysis of Junctionless FET with LG = 10 nm -- Simulation analysis of Tunnel FET -- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.
520	3		_aThis book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
988			_aEBSPRINGER_2018
650		7	_2embne _9140004 _aSemiconductores
700	1		_aJhan, Yi-Ruei. _eautor. _4aut _4http://id.loc.gov/vocabulary/relators/aut
710	2		_aSpringerLink (Online service) _0http://id.loc.gov/authorities/names/no2005046756 _1http://viaf.org/viaf/274647764/ _9106996
776	0	8	_iEdición impresa: _z9789811097799
776	0	8	_iEdición impresa: _z9789811030659
776	0	8	_iEdición impresa: _z9789811030673
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-981-10-3066-6 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE