000			03747nam a2200445 i 4500
710	2		_aSpringerLink (Online service) _0http://id.loc.gov/authorities/names/no2005046756 _1http://viaf.org/viaf/274647764/ _9106996
999			_c102425 _d102425 _x1
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003			ES-MaUEC
005			20230102113041.0
006			a||||fo|||| 00| 0
007			cr nn 008mamaa
008			180512s2018 gw | s |||| 0|eng d
020			_a9783319779942
024	7		_a10.1007/978-3-319-77994-2 _2doi
040			_aES-MaUEC _bspa _cES-MaUEC _dES-MaUEC
050		4	_aTK7871.85 _b2018 EB
245	0	0	_aGallium Nitride-enabled High Frequency and High Efficiency Power Conversion _cedited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
264		1	_aCham _bSpringer International Publishing _c2018
300			_a1 recurso en línea (XIII, 232 páginas) _b183 ilustraciones, 165 ilustraciones a color
336			_2rdacontent _aTexto _btxt
337			_2rdamedia _aelectrónico _bc
338			_2rdacarrier _arecurso electrónico _bcr
347			_atext file _bPDF
490	0		_aIntegrated Circuits and Systems _x1558-9412
490	0		_aEngineering (Springer-11647)
505	0		_aChapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
520	3		_aThis book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
988			_aEBSPRINGER_2018
650		7	_2embne _aSemiconductores _9140004
650		7	_2embne _9140359 _aTransistores
650		7	_2embne _aCircuitos eléctricos _9139226
700	1		_aMeneghesso, Gaudenzio. _eeditor literario _4edt _4http://id.loc.gov/vocabulary/relators/edt _0http://id.loc.gov/authorities/names/no2018103743 _1http://viaf.org/viaf/188153409681641580529/
700	1		_aMeneghini, Matteo. _eeditor literario _4edt _4http://id.loc.gov/vocabulary/relators/edt _0http://id.loc.gov/authorities/names/no2018103479 _1http://viaf.org/viaf/96696886/
700	1		_aZanoni, Enrico. _eeditor literario _4edt _4http://id.loc.gov/vocabulary/relators/edt _0http://id.loc.gov/authorities/names/n88084942 _1http://viaf.org/viaf/21227236/
776	0	8	_iEdición impresa: _z9783319779935
776	0	8	_iEdición impresa: _z9783319779959
856	4	0	_uhttps://go.openathens.net/redirector/universidadeuropea.es?url=https://doi.org/10.1007/978-3-319-77994-2 _zAcceso a este recurso digital (usuarios Universidad Europea de Madrid)
942			_2lcc _cLE
998			_b05/2020 _dz _ek _zSI