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Transistores FET y MOS FET / Julio López Ramos

by López Ramos, Julio.

Material type: articlePrinted books Publisher: Madrid : Instituto Oficial de Radio Televisión Española, D.L. 1994Items
Location Call no. Status Vol info Loan type
Colección General (Campus Alcobendas) TK7871.95 .L67 1994 available

Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor / by Iraj Sadegh Amiri, Mahdiar Ghadiry.

by Amiri, Iraj Sadegh, (1977-), autor | Ghadiry, Mahdiar, autor.

Material type: bookE-book Publisher: Singapore : Springer International Publishing, 2018Items
Location Call no. Status Vol info Loan type
Acceso Electrónico (UEM) TK7871.95 A457 2018 EB reference

Mitigating Process Variability and Soft Errors at Circuit-Level for FinFETs / by Alexandra Zimpeck, Cristina Meinhardt, Laurent Artola, Ricardo Reis

by Zimpeck, Alexandra, autor | Meinhardt, Cristina, autor | Artola, Laurent, autor | Reis, Ricardo, autor.

Edition: First edition 2021Material type: bookE-book Publisher: Cham : Springer International Publishing, 2021Items
Location Call no. Status Vol info Loan type
Acceso Electrónico (UEM) TK7871.95 2021 EB reference

Compound Semiconductor Materials and Devices / by Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou

by Liu, Zhaojun, (Electronics engineer), autor | Huang, Tongde, autor | Li, Q.(Qiang), (1943-), autor | Xing, Lu, autor | Zou, Xinbo, autor.

Edition: 1st edition 2016Material type: bookE-book Publisher: Cham : Springer International Publishing, 2016Items
Location Call no. Status Vol info Loan type
Acceso Electrónico (UEM) TK7871.99.C65 2016 EB reference

Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET / by Nabil Shovon Ashraf

by Ashraf, Nabil Shovon, (1974-), autor.

Edition: 1st edition 2018Material type: bookE-book Publisher: Cham : Springer International Publishing, 2018Items
Location Call no. Status Vol info Loan type
Acceso Electrónico (UEM) TP482 2018 EB reference

HF-Based High-K Dielectrics : Process Development, Performance Characterization, and Reliability / by Young-Hee Kim, Jack C. Lee

by Kim, Young-Hee, (1972-), autor | Lee, Jack C, autor.

Edition: 1st edition 2005Material type: bookE-book Publisher: Cham : Springer International Publishing, 2005Items
Location Call no. Status Vol info Loan type
Acceso Electrónico (UEM) QC585 2005 EB reference

RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors / by Keith A. Jenkins

by Jenkins, Keith A, (1953-), autor.

Edition: 1st edition 2022Material type: bookE-book Publisher: Cham : Springer International Publishing, 2022Items
Location Call no. Status Vol info Loan type
Acceso Electrónico (UEM) TK7871.95 2022 EB reference

Advanced SPICE Model for GaN HEMTs (ASM-HEMT) : A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design / by Sourabh Khandelwal

by Khandelwal, Sourabh, autor.

Edition: 1st edition 2022Material type: bookE-book Publisher: Cham : Springer International Publishing, 2022Items
Location Call no. Status Vol info Loan type
Acceso Electrónico (UEM) TK7871.95 2022 EB reference

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