Tunneling Field Effect Transistor Technology / edited by Lining Zhang, Mansun Chan
Contributor(s): SpringerLink (Online service)
| Zhang, Lining., editor literario
| Chan, Mansun., editor literario
Material type:
E-bookPublisher: Cham : Springer International Publishing, 2016Description: 1 recurso en línea (IX, 213 páginas) : 147 ilustraciones, 122 ilustraciones en color.ISBN: 9783319316536.Subject: Circuitos electrónicos
| Item type | Current library | Collection | Call number | Copy number | Status | Date due | Barcode | Item holds | |
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Madrid Digital Acceso Electrónico (UEM) | Ciencias e Ingeniería | TK7871.95 T866 2016 EB (Browse shelf(Opens below)) | .i11594111 | Acceso electrónico | eBOOK .i11594111 |
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Steep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
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