Silicon Nanowire Transistors / by Ahmet Bindal, Sotoudeh Hamedi-Hagh
By: Bindal, Ahmet
Contributor(s): Hamedi-Hagh, Sotoudeh
Material type:
E-bookPublisher: Cham : Springer International Publishing, 2016Edition: 1st ed.Description: 1 recurso en línea (XIV, 165 p.) : 145 ilustraciones, 140 ilustraciones col..ISBN: 9783319271774.Subject: Microelectrónica
Summary: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology�s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types of memory on the same chip, such as capacitive cells and transistors with floating gates that can be used as DRAMs and Flash memories.
| Item type | Current library | Collection | Call number | Copy number | Status | Date due | Barcode | Item holds | |
|---|---|---|---|---|---|---|---|---|---|
LIBRO-E NO PRÉSTAMO
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Madrid Digital Acceso Electrónico (UEM) | Ciencias e Ingeniería | TK7874.85 .B563 2016 EB (Browse shelf(Opens below)) | .i11589553 | Acceso electrónico | eBOOK .i11589553 |
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This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology�s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types of memory on the same chip, such as capacitive cells and transistors with floating gates that can be used as DRAMs and Flash memories.
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