Image from Google Jackets

Modeling Bipolar Power Semiconductor Devices / by Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus Bryant

By: Gachovska, Tanya K., autor
Contributor(s): Hudgins, Jerry L., autor | Santi, Enrico, (College teacher), autor | Bryant, Angus, autor
Material type: materialTypeLabelE-bookSeries: (Synthesis Lectures on Power Electronics, 1931-9533).Publisher: Cham : Springer International Publishing, 2013Edition: 1st edition 2013.Description: 1 recurso en línea (VIII, 88 páginas).ISBN: 9783031024986.Subject: Semiconductores -- Modelos matemáticos | NanotecnologíaOnline resources: Acceso a este recurso digital (usuarios Universidad Europea de Madrid)Digital Resources
Contents:
Introduction to Power Semiconductor Device Modeling -- Physics of Power Semiconductor Devices -- Modeling of a Power Diode and IGBT -- IGBT Under an Inductive Load-Switching Condition in Simulink -- Parameter Extraction.
Summary: This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
Tags from this library: No tags from this library for this title. Log in to add tags.
Star ratings
    Average rating: 0.0 (0 votes)
Holdings
Item type Current library Collection Call number Status Date due Barcode Item holds
LIBRO-E NO PRÉSTAMO LIBRO-E NO PRÉSTAMO Madrid Digital Acceso Electrónico (UEM) Ciencias e Ingeniería TK7871.85 2013 EB (Browse shelf(Opens below)) Acceso electrónico eBook.01112753
Total holds: 0

Introduction to Power Semiconductor Device Modeling -- Physics of Power Semiconductor Devices -- Modeling of a Power Diode and IGBT -- IGBT Under an Inductive Load-Switching Condition in Simulink -- Parameter Extraction.

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.

There are no comments on this title.

to post a comment.