Modeling Bipolar Power Semiconductor Devices / by Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus Bryant
By: Gachovska, Tanya K., autor
Contributor(s): Hudgins, Jerry L., autor
| Santi, Enrico, (College teacher), autor
| Bryant, Angus, autor
Material type:
E-bookSeries: (Synthesis Lectures on Power Electronics, 1931-9533).Publisher: Cham : Springer International Publishing, 2013Edition: 1st edition 2013.Description: 1 recurso en línea (VIII, 88 páginas).ISBN: 9783031024986.Subject: Semiconductores -- Modelos matemáticos
| Item type | Current library | Collection | Call number | Status | Date due | Barcode | Item holds | |
|---|---|---|---|---|---|---|---|---|
LIBRO-E NO PRÉSTAMO
|
Madrid Digital Acceso Electrónico (UEM) | Ciencias e Ingeniería | TK7871.85 2013 EB (Browse shelf(Opens below)) | Acceso electrónico | eBook.01112753 |
Introduction to Power Semiconductor Device Modeling -- Physics of Power Semiconductor Devices -- Modeling of a Power Diode and IGBT -- IGBT Under an Inductive Load-Switching Condition in Simulink -- Parameter Extraction.
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
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