Multigate Transistors for High Frequency Applications
Sivasankaran, K.
Multigate Transistors for High Frequency Applications by K. Sivasankaran, Partha Sharathi Mallick - 1st ed 2023 - 1 recurso en línea - Springer Tracts in Electrical and Electronics Engineering 2731-4219 .
1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
9789819901579
10.1007/978-981-99-0157-9 doi
Redes informáticas
TK5105.5 / 2023 EB
Multigate Transistors for High Frequency Applications by K. Sivasankaran, Partha Sharathi Mallick - 1st ed 2023 - 1 recurso en línea - Springer Tracts in Electrical and Electronics Engineering 2731-4219 .
1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
9789819901579
10.1007/978-981-99-0157-9 doi
Redes informáticas
TK5105.5 / 2023 EB