Compound Semiconductor Materials and Devices
Liu, Zhaojun (Electronics engineer)
Compound Semiconductor Materials and Devices by Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou - 1st edition 2016 - 1 recurso en línea (VII, 65 páginas) - Synthesis Lectures on Emerging Engineering Technologies 2381-1439 .
Introduction -- GaN-based HEMTs and MOSHEMTs -- III-V Materials and Devices -- Summary -- References -- Authors' Biographies .
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
9783031020285
10.1007/978-3-031-02028-5 doi
Transistores de efecto de campo
Semiconductores
TK7871.99.C65 / 2016 EB
Compound Semiconductor Materials and Devices by Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou - 1st edition 2016 - 1 recurso en línea (VII, 65 páginas) - Synthesis Lectures on Emerging Engineering Technologies 2381-1439 .
Introduction -- GaN-based HEMTs and MOSHEMTs -- III-V Materials and Devices -- Summary -- References -- Authors' Biographies .
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
9783031020285
10.1007/978-3-031-02028-5 doi
Transistores de efecto de campo
Semiconductores
TK7871.99.C65 / 2016 EB