Research on the Radiation Effects and Compact Model of SiGe HBT
Sun, Yabin
Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun. - 1 recurso en línea (XXIV, 168 páginas 171 ilustraciones) - Springer Theses, Recognizing Outstanding Ph.D. Research 2190-5053 Engineering (Springer-11647) .
Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
9789811046124
10.1007/978-981-10-4612-4 doi
Semiconductores
Circuitos de transistores
TK7871.96.B55 / S869 2018 EB
Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun. - 1 recurso en línea (XXIV, 168 páginas 171 ilustraciones) - Springer Theses, Recognizing Outstanding Ph.D. Research 2190-5053 Engineering (Springer-11647) .
Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
9789811046124
10.1007/978-981-10-4612-4 doi
Semiconductores
Circuitos de transistores
TK7871.96.B55 / S869 2018 EB