Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
Cheng, Jie
Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect by Jie Cheng. - 1 recurso en línea (XVIII, 137 páginas 103 ilustraciones) - Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 Engineering (Springer-11647) .
This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
9789811061653
10.1007/978-981-10-6165-3 doi
Circuitos integrados
TK7874.84 / C446 2018 EB
Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect by Jie Cheng. - 1 recurso en línea (XVIII, 137 páginas 103 ilustraciones) - Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 Engineering (Springer-11647) .
This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
9789811061653
10.1007/978-981-10-6165-3 doi
Circuitos integrados
TK7874.84 / C446 2018 EB